320 each Avalanche Photodiodes (APDs) Arrays, 32-channel device to operate with Gain of 100, 2 step epitaxial growth on a n++ substrate, with ion deposition between & after epitaxial steps. The specs are 0.9 x 2.0 mm squared active area pixels arranged in 2 arrays of 2 x 8 to make a total of 32/package. Dark current at room temperature at a Gain of 100 <5nA in a single pixel. Pixel separation should be at least 0.6 mm between pixels in both directions in an array. Separation between arrays should be at least 2.0 mm; a quantum efficiency of 80% or more at 515 mm; array should be mounted on a PCB using flip-chip technology; operate in a temperature range of 35C to -25C and capacitance of <11 pF when operating at Gain of 100; a non-uniformity of response between pixels in the array at Gain of 100 <+/- 10%; a ceramic plate should be bonded directly to the array.

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