(10)Avalanche Photodiodes Arrays, 32-channel device to operate with Gain of 100, 2 step epitaxial growth on a n++ substrate, w/ion deposition between & after epitaxial steps. The specs are 1 x 2 mm squared active area pixels arranged in 2 arrays of 2 x 8 to make a total of 32/package. Dark current @ room temp. @ a Gain of 100 < 5nA in a single pixel.Pixel separation should be @ least 0.6 mm between pixels in both directions in an array. Separation between arrays should be @ least 2.0 mm;a quantum efficiency of 80% or more @ 515 mm;array should be mounted on a PCB using flip-chip technology;operate in temp. range of 35C to -25C& capacitance of < 11 pF when operating @ Gain of 100; a non-uniformity of response between pixels in the array @ Gain of 100 of < +/- 10%; a thermo-electric cooler should be bonded directly to the array.

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