The Naval Research Laboratory intends to award to RFMD Infrastructure Product Group, on other than full and open competitive basis a contract for 40 Gallium Nitride High Electron Mobility Transistors 2X400UM GAN HEMT Devices in test fixtures complete with matching circuit, DC Bias Network and SMA Coaxial Connectors. Additional specifications will appear on RFQ. Sole source based on equipment being proprietary to RFMD Infrastructure Product Group. (Microsoft IE required. See note(s) 22. Vendors who feel that they can provide the above equipment shall fully identify their interest and submit their capabilities to meet the above requirements within15 days after the publication of this synopsis. Responses received after 15 days or without the required information will be considered non-responsive to the synopsis and not be considered. Note: All offerors will be ineligible for award unless they have registered in DOD’s Central Contractor Registration database. Information on CCR registration and annual confirmation requirements can be obtained via Internet at http://www.ccr.gov or by calling 1-888-227-2423.

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