NASA/GRC has a requirement for the following:4H-SiC substrate, Si-face, high-purity, semi-insulating (SI), research grade 2" dia., 8off-axis, resistivity > 1x105 ohm-cm, both sides polished/silicon face with CMPfinish. Thickness: 250-300m. Epilayer: P-type, 1-4x1019 cm-3, 3um. 4H-SiC substrate, Si-face, high-purity, SI, research grade 2" dia., 8 off-axis,resistivity > 1x105 ohm-cm, both sides polished/silicon face with CMP finish.Thickness: 250-300m. Epilayer: P-type, 5-9x1019 cm-3, 2um. 4H-SiC substrate, Si-face, high-purity, SI, research grade 2" dia., 8 off-axis,resistivity > 1x105 ohm-cm, both sides polished/silicon face with CMP finish.Thickness: 250-300m. Epilayer: P-type, >2x1020 cm-3, 0.5um. 4H-SiC substrate, Si-face, high-purity, SI, research grade 2" dia., 8 off-axis,resistivity > 1x105 ohm-cm, both sides polished/silicon face with CMP finish.Thickness: 250-300m. Epilayer: N-type, 2x1019 cm-3 to maximum possible, 3um. NASA/GRC intends to purchase the 4H-SiC Wafers from Cree, Incorporated, 4600 SiliconDrive, Durham, NC 27703.The properties of the wafers being purchased from Cree need to be consistent with theprevious wafers purchased. To purchase these wafers from sources other than Cree wouldjeopardize years of electrical characterization of the Cree wafers. To purchase fromsources other than Cree would require that we conduct a comprehensive characterization ofthe new wafers. This could take years to accomplish. Therefore, it is important that thespecification between the previous and current purchase be consistent. The Government intends to acquire a commercial item using FAR Part 12 and the SimplifiedAcquisition Procedures set forth in FAR Part 13. The Sole Source is under the authority of FAR reference 13.106-1(b)1. Oral communications are not acceptable in response to this notice. 18.52.215-84 Ombudsman. (OCT 2003) An Ombudsman has been appointed. See NASA Specific Note "B". Any referenced notes may be viewed at the following URLs linked below.

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