The Air Force mission is dependent upon sensor superiority for radar, electronic warfare and communications. The need for superiority extends from DC to microwave through sub-mm wave (300MHz - 300GHz). Exploitation of homo/hetero-epitaxial devices fabricated on SiC holds promise for revolutionary improvements in the cost, size, weight and performance of a broad range of military RF and power management and distribution components. Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are rapidly becoming the technology of choice for high power RF amplification. The combination of high voltage and current handling as well as switching frequency capabilities make SiC based power devices a viable alternative to silicon technology. Fabrication of SiC power devices requires homo-epitaxial growth of precisely doped SiC layers ranging in thickness from a few microns to > 100 μm. Critical to the realization of this promise is the availability of large diameter semi-conducting and semi-insulating SiC substrates.

The goal of this effort is to develop a merchant oriented manufacturer of affordable, high quality, 200mm conducting (4H N-doped) and semi-insulating (6H V-doped) SiC substrates and SiC epitaxial films for use in advanced GaN and SiC radio frequency (RF) and power switching semiconductor devices.

This effort encompasses the development, assessment and manufacturing of single crystal SiC boules, homoepitaxial films and associated device demonstrations. Technical goals include; 1). SiC Crystal Growth, 2) SiC Substrate Fabrication and Polishing, 3) SiC Homoepitaxy, 4) Material Characterization, 5) Material and Device Correlation.