Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are rapidly becoming the technology of choice for high power RF applications. GaN RF devices are dependent upon the use of high quality, semi-insulating SiC substrates. The combination of high voltage and current handling as well as switching frequency capabilities make SiC based power devices a viable alternative to silicon technology. Fabrication of SiC power devices requires homo-epitaxial growth of precisely doped SiC layers ranging in thickness from a few microns to > 100 μm depending upon the voltage requirements. Critical to the realization is the availability of affordable, high quality, large diameter SiC substrates and epitaxy from a pure play supplier. The Air Force Research Laboratory (AFRL) is interested in advancing the current technological state-of-the-art with respect to SiC growth and fabrication.

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