(1) Action Code : SOURCES SOUGHT

This is a Sources Sought Notice only. This is not a request for proposal, but a survey to locate potential sources. This Sources Sought does not constitute an Invitation for Bids, Request for Proposals, or a Request for Quotations, and is not to be construed as a commitment by the Government to issue an order or otherwise pay for the information solicited, nor is it a guarantee of a forthcoming solicitation or contract. It is for market research purposes only. Respondents will not be notified of the results of the evaluation.

The purpose of this Sources Sought Notice is to gain knowledge of interest, capabilities, and qualifications of various members of industry, to include the Small Business Community: Small Business, Section 8(a), Historically Underutilized Business Zones (HUB-Zone), Service-Disabled Veteran-Owned Small Business (SDVOSB), Women-Owned Small Business (WOSB), and Economically Disadvantaged Women-Owned Small Business (EDWOSB). The Government must ensure there is adequate competition among the potential pool of responsible contractors. Small business, Section 8(a), HUBZone, SDVOSB, WOSB, & EDWOSB businesses are highly encouraged to participate.

(2) Date : 12/17/2015

(3) Classification Code : 59

(4) NAICS Code: 334413

(5) NAICS Size Standard: 500 employees

(6) Contracting Office Address: 2800 Powder Mill Road, Bldg. 601
Adelphi, Maryland 20783

(7) Subject: Sources Sought for five (5) 4-inch aluminum gallium nitride (AlGaN)/gallium nitride (GaN) high electron mobility transistors (HEMT) structures grown on silicon substrates.

(8) Proposed Solicitation Number: W911QX-16-T-0062

(9) Sources Sought Closing Response Date: 12/23/2015

(10) Contact Point: Adrian Barber, Contract Specialist, [email protected] 301-394-1503.
(11)

A. Objective:

To find sources that are qualified to meet the supplies/services as listed in section 11B. Note that the specific requirements in section C are subject to change prior to the release of any solicitation.

B. Technical Specifications

We require a quantity of five (5), 4'' GaN wafers with a HEMT device structure grown on silicon substrates for the fabrication of the first stretchable HEMT device. The specific device structure (referred to as the HEMT structure) that we require is (starting from the top surface) 2 -3 nm GaN cap/20 nm Al0.26Ga0.74N barrier/1 - 2 microns GaN/Transition layer(s)/Czochralski (111) p-type substrate. These wafers are required for our mission. While GaN is often grown on other substrates such as sapphire, SiC, and GaN, the device structures must be grown on silicon substrates because ultimately we must remove the Si substrate to render the HEMT device stretchable.

C. Responses:

All interested parties should notify this office by e-mail within the posted date. Responses shall include:

(I) To what extent each of the specifications can be met.

(II) Include your type of business (i.e. commercial, academia), whether your organization is classified as a large or small business based on the 500 employee size standard that accompanies NAICS code 334413. If a small business, you must also list any small disadvantaged status you hold [HUBZone, 8(a), Service Disabled Veteran Owned Small Business (SDVOSB), Women Owned Small Business (WOSB), Economically Disadvantaged Women-Owned Small Business (EDWOSB), etc.].

(III) Past experience/ performance through the description of completed projects.

(12) Responses to this sources sought synopsis are due no later than 2359 (11:59 PM) eastern standard time 23 December 2015. Submissions should be emailed to Adrian Barber [email protected].

Questions concerning this sources sought synopsis may be directed to Adrian Barber at [email protected] or 301-394-1503. Please be advised that .zip and .exe files cannot be accepted.

(13) Place of Contract Performance: Contractor/Vendor's facility

(14) Estimated Delivery Timeframe or Period of Performance: 6 weeks after receipt of Purchase Order (PO).

Bid Protests Not Available