The Quantum Science and Technology Branch at the Army Research Laboratory (ARL) requires a quantity of 20 Silicon Carbide (SiC) substrates for growth of Silicon Carbide devices. Specifically, the 20 Silicon Carbide substrates will be used for optoelectronics, and technology development. The contractor shall provide 20 Silicon Carbide substrates that includes the following minimum specifications of the Government:

• The waver shall be 150 millimeters (mm) diameter silicon carbide (SiC) wafers
• The wafer shall be 47.5 mm flat
• The wafer shall be 350 micrometers plus or minus (+/-) 50 micrometers thick.
• Shall have a four (4) degrees (°) off-cut
• Shall be nitrogen doped (N+)
• Shall be double-side polished
• Silicon (Si-face Epi-Ready), Epi-Ready the surface is in a condition such the monocrystalline Epi layer can be successfully grown on it.  The surface roughness is in the order of 1 nanometer (nm) and the surface is free of dust particles and metal contamination.
• The wafer shall be 4H-polytype
• Basal Plane Dislocation (BPD) densities below 3000 per square centimeter (<3000 cm^-3) for epitaxial growth of 4H-SiC. This lower BPD density will improve the devices grown on these wafers, which will assist in our overall research. 
• Shall have Threading Edge Dislocations (TED) below 3000 per square centimeter for epitaxial growth of 4H-SiC
• Total usable surface area of the wafer- Quantitative by automated optical surface inspection and 2mm x 2mm site map greater than (>) 90 percent (%).

Delivery address: 

US ARMY RESEARCH LABORATORY 
SHIPPING & RECEIVING
ATTN BRENDA VANMIL 
2800 POWDER MILL RD
ADELPHI MD 20783-1138
301-394-0979

Delivery should be no later than three months after the award.