Sources sought for:
Brand name or equal to Institut fur Photonische Technologien e.V. (Institute of Photonic Technology)
1.) SOI Wafer (diameter 100mm, thickness 510 +/- µm with chips (3mm x 3mm, accuracy +0.0mm/-0.1mm) with slit diaphragm structures (thickness 10 +/-1µm, length 25µm, width 1-10µm, accuracy +/-100nm).
2.) SOI Wafer (diameter 100mm, thickness 503 +/- 10µm with chips (3mm x 3mm, accuracy +0.0mm/-0.1mm) with slit diaphragm structures (thickness 3 +/-0.5µm, length 20µm, width 0.5-5µm, accuracy +/-100nm).